The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Mar. 21, 2017
Applicant:

Nec Corporation, Tokyo, JP;

Inventor:

Makihiro Otohata, Tokyo, JP;

Assignee:

NEC CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/04 (2006.01); H01M 4/139 (2010.01); H01M 4/62 (2006.01); H01M 4/66 (2006.01); H01M 4/70 (2006.01);
U.S. Cl.
CPC ...
H01M 4/0404 (2013.01); H01M 4/139 (2013.01); H01M 4/62 (2013.01); H01M 4/661 (2013.01); H01M 4/70 (2013.01);
Abstract

A method of manufacturing an electrode, comprising the steps of: forming a first layer by intermittently applying a layer to a current collecting foil with thickness of 40 μm or more and 300 μm or less; and forming a second layer, wherein the second layer is formed both on a region where the first layer has been formed on the current collecting foil and an exposed region where the current collecting foil is exposed without being formed the first layer; wherein in the step of forming of second layer, providing a gap of 40 μm or more between a applying part of application apparatus and the current collecting foil, based on a positional information of the first layer, from during applying a layer to the exposed region to during applying a layer to the first layer.


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