The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Dec. 05, 2019
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Inventors:

Shunpei Yamazaki, Tokyo, JP;

Satoshi Seo, Kanagawa, JP;

Nobuharu Ohsawa, Kanagawa, JP;

Satoko Shitagaki, Kanagawa, JP;

Hideko Inoue, Kanagawa, JP;

Hiroshi Kadoma, Kanagawa, JP;

Harue Osaka, Kanagawa, JP;

Kunihiko Suzuki, Kanagawa, JP;

Yasuhiko Takemura, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0059 (2013.01); H01L 51/0067 (2013.01); H01L 2251/5384 (2013.01); H01L 2251/552 (2013.01);
Abstract

A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.


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