The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Apr. 18, 2019
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Yoshihisa Kagawa, Nagasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 27/112 (2006.01);
U.S. Cl.
CPC ...
H01L 45/085 (2013.01); H01L 27/112 (2013.01); H01L 27/24 (2013.01); H01L 45/12 (2013.01); H01L 45/124 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/1266 (2013.01); H01L 45/146 (2013.01); H01L 45/1625 (2013.01); H01L 45/1675 (2013.01);
Abstract

A memory device includes: a memory layer that is isolated for each memory cell and stores information by a variation of a resistance value; an ion source layer that is formed to be isolated for each memory cell and to be laminated on the memory layer, and contains at least one kind of element selected from Cu, Ag, Zn, Al and Zr and at least one kind of element selected from Te, S and Se; an insulation layer that isolates the memory layer and the ion source layer for each memory cell; and a diffusion preventing barrier that is provided at a periphery of the memory layer and the ion source layer of each memory cell to prevent the diffusion of the element.


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