The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Jun. 04, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Priscilla D. Antunez, Tarrytown, NY (US);

Yun Seog Lee, White Plains, NY (US);

Ravin Mankad, Mumbai, IN;

Teodor K. Todorov, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0749 (2012.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0749 (2013.01); H01L 31/022425 (2013.01); Y02E 10/541 (2013.01);
Abstract

A photovoltaic device with increased efficiency and a method for making the same. The present invention provides a photovoltaic device including: a transparent substrate; a transparent conductive electrode layer disposed on the transparent substrate; an n-type layer disposed on the transparent conductive electrode layer; a chalcogen absorber layer disposed on the n-type layer; a p-type molybdenum trioxide (MoO3) interlayer disposed on the chalcogen absorber layer; and a conductive layer disposed on the interlayer. A photovoltaic device having a superstrate configuration with the order of the layers reversed is also provided. The present invention further provides methods for making the photovoltaic devices according to the present invention.


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