The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Jun. 26, 2018
Applicant:
Array Photonics, Inc., Tempe, AZ (US);
Inventors:
Ferran Suarez, Chandler, AZ (US);
Ting Liu, San Jose, CA (US);
Arsen Sukiasyan, Plainsboro, NJ (US);
Ivan Hernandez, Gilbert, AZ (US);
Jordan Lang, Sunnyvale, CA (US);
Radek Roucka, East Palo Alto, CA (US);
Sabeur Siala, Sunnyvale, CA (US);
Aymeric Maros, San Francisco, CA (US);
Assignee:
ARRAY PHOTONICS, INC., Tempe, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0687 (2012.01); H01L 31/0304 (2006.01); H01L 31/18 (2006.01); H01L 31/20 (2006.01); H01L 31/078 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0687 (2013.01); H01L 31/03042 (2013.01); H01L 31/03044 (2013.01); H01L 31/03046 (2013.01); H01L 31/03048 (2013.01); H01L 31/078 (2013.01); H01L 31/1848 (2013.01); H01L 31/1864 (2013.01); H01L 31/1868 (2013.01); H01L 31/206 (2013.01);
Abstract
Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.