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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10930771 B1

PDFFull Text
Date of Patent:
Feb. 23, 2021

Filed:

Oct. 08, 2018

Semiconductor device having an insulated gate bipolar transistor and method of manufacturing the same

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Nao Nagata, Tokyo, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Hung K Vu

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 27/07 (2006.01); H01L 29/08 (2006.01); H01L 21/8249 (2006.01); H01L 29/417 (2006.01); H03K 17/567 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 21/8249 (2013.01); H01L 27/0716 (2013.01); H01L 29/0619 (2013.01); H01L 29/0696 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/1095 (2013.01); H01L 29/401 (2013.01); H01L 29/407 (2013.01); H01L 29/417 (2013.01); H01L 29/41708 (2013.01); H01L 29/4236 (2013.01); H01L 29/66348 (2013.01); H01L 29/7396 (2013.01); H03K 17/567 (2013.01); H01L 27/088 (2013.01); H01L 29/4238 (2013.01); H01L 29/7827 (2013.01);
Abstract

Performance of a semiconductor device is improved. An active cell region has a first gate electrode that extends in a Y direction and receives a gate potential, and a second gate electrode that extends in the Y direction and receives an emitter potential. A hybrid cell region including a p-type base region and an n-type emitter region is disposed in the active cell region. An n-type isolation region adjacent to the hybrid cell region in the Y direction is formed in the active cell region excluding the hybrid cell region. Hence, even if the p-type base region or a p-type floating region is formed in the active cell region excluding the hybrid cell region, such a p-type region is isolated from the base region in the hybrid cell region by the isolation region.

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