The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Feb. 21, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Joon Goo Hong, Austin, TX (US);
Borna J. Obradovic, Leander, TX (US);
Kang-ill Seo, Springfield, VA (US);
Mark Stephen Rodder, Dallas, TX (US);
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of manufacturing a field effect transistor includes forming a fin on a substrate, forming source and drain electrodes on opposite sides of the fin, forming a gate stack on a channel portion of the fin between the source and drain electrodes, forming gate spacers on extension portions of the fin on opposite sides of the gate stack, removing at least a portion of the gate spacers to expose the extension portions of the fin, and thinning the extension portions of the fin. Following the thinning of the extension portions of the fin, the channel portion of the fin has a first width and the extension portions of the fin have a second width less than the first width.