The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Dec. 26, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Yong Ho Jeon, Hwaseong-si, KR;
Jung Hyun Kim, Hwaseong-si, KR;
Sung Woo Myung, Hwaseong-si, KR;
Young Mook Oh, Hwaseong-si, KR;
Dong Seok Lee, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/763 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42368 (2013.01); H01L 21/764 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01);
Abstract
Semiconductor devices are provided. A semiconductor device includes a channel region that protrudes from a substrate. The semiconductor device includes a gate line on the channel region. Moreover, the semiconductor device includes a gate isolation layer that is between a first portion of the gate line and a second portion of the gate line. The gate isolation layer is in contact with the gate line and includes a gap that is in the gate isolation layer. Related methods of manufacturing a semiconductor device are also provided.