The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Mar. 19, 2019
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Memory Corporation, Minato-ku, JP;
Nobuki Kanrei, Yokohama, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor device includes an oxide semiconductor layer, a first electrode, a second electrode, and a control electrode. The oxide semiconductor layer includes tin and tungsten. An average coordination number of oxygen atoms to tin atoms is greater than 3 but less than 4. The first electrode is electrically connected to a first end portion of the oxide semiconductor layer. The second electrode is electrically connected to a second end portion of the oxide semiconductor layer on a side opposite to the first end portion. The control electrode opposes a portion of the oxide semiconductor layer between the first end portion and the second end portion.