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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10930720 B1

PDFFull Text
Date of Patent:
Feb. 23, 2021

Filed:

Mar. 28, 2019

Display device and manufacturing method thereof

Applicant:

Japan Display Inc., Tokyo, JP;

Inventors:

Miyuki Ishikawa, Tokyo, JP;

Masashi Tsubuku, Tokyo, JP;

Assignee:

JAPAN DISPLAY INC., Tokyo, JP;

Attorney:

Xsensus LLP

Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 27/326 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/1262 (2013.01); H01L 27/3262 (2013.01); H01L 29/4908 (2013.01); H01L 29/518 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); G02F 1/1368 (2013.01); G02F 1/136227 (2013.01); G02F 2001/13685 (2013.01); H01L 27/3248 (2013.01); H01L 27/3258 (2013.01);
Abstract

One embodiment of the invention is characterized as follows. A display device comprising: a display area including a plurality of pixels, each of the pixels has a first TFT and a second TFT, the first TFT and the second TFT comprise an oxide semiconductor, the first TFT and the second TFT are covered by an interlayer insulating film, a first through hole is formed in the in the interlayer insulating film to connect a drain of the first TFT, wherein a distance d1 between a center of the first through hole and an edge of a channel of the first TFT is shorter than a distance d2 between a center of the first through hole and an edge of a channel of the second TFT, a channel length of the first TFT is shorter than a channel length of the second TFT.

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