The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Jun. 14, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hanjin Lim, Seoul, KR;

Kijong Park, Yongin-si, KR;

Younsoo Kim, Yongin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/417 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10814 (2013.01); H01L 28/60 (2013.01); H01L 29/41725 (2013.01);
Abstract

Semiconductor devices are provided. The semiconductor devices may include an active pattern on a substrate. The active pattern may include a first source/drain region and a second source/drain region. The semiconductor devices may also include a bit line electrically connected to the first source/drain region, a first connection electrode electrically connected to the second source/drain region, and a capacitor on the first connection electrode. The capacitor may include a first electrode, a second electrode, and a dielectric pattern between the first and second electrodes. A lower portion of the dielectric pattern may overlap a top surface of the first connection electrode, and the first electrode may extend on an upper portion of a sidewall of the first connection electrode.


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