The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Dec. 05, 2018
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Henry L. Edwards, Garland, TX (US);

Akram A. Salman, Plano, TX (US);

Md Iqbal Mahmud, Waterford, NY (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 27/0259 (2013.01); H01L 29/0649 (2013.01);
Abstract

An electrostatic discharge (ESD) protection circuit (FIG.A) for an integrated circuit is disclosed. The circuit is formed on a substrate (P-EPI) having a first conductivity type. A buried layer (NBL) having a second conductivity type is formed below a face of the substrate. A first terminal () and a second terminal () are formed at a face of the substrate. A first ESD protection device () has a first current path between the first terminal and the buried layer. A second ESD protection device () has a second current path in series with the first current path and between the second terminal and the buried layer.


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