The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Sep. 06, 2018
Applicant:

Amazing Microelectronic Corp., New Taipei, TW;

Inventors:

Yu-Shu Shen, Chiayi County, TW;

Mei-Lian Fan, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 29/0646 (2013.01); H01L 29/0692 (2013.01);
Abstract

A transient voltage suppressor is provided, comprising a heavily doped substrate connected to a first node, a first doped layer formed on the heavily doped substrate, a second doped layer formed on the first doped layer, a first heavily doped region and a second heavily doped region formed in the second doped layer and coupled to a second node, and a plurality of trenches arranged in the heavily doped substrate, having a depth not less than that of the first doped layer for electrical isolation. The heavily doped substrate, the second doped layer, and the second heavily doped region belong to a first conductivity type. The first doped layer and the first heavily doped region belong to a second conductivity type. By employing the proposed present invention, pn junctions of the transient voltage suppressor can be controlled beneath the surface, thereby reducing the junction capacitance effectively.


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