The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Aug. 20, 2018
Applicant:

Amazing Microelectronic Corp., New Taipei, TW;

Inventors:

Kun-Hsien Lin, Hsinchu, TW;

Zi-Ping Chen, New Taipei, TW;

Che-Hao Chuang, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/082 (2006.01); H01L 27/102 (2006.01); H01L 29/70 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/735 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 27/067 (2013.01); H01L 27/082 (2013.01); H01L 29/0623 (2013.01); H01L 29/0821 (2013.01); H01L 29/735 (2013.01); H02H 9/04 (2013.01);
Abstract

A transient voltage suppression device includes a lightly-doped semiconductor structure, a first doped well, a first heavily-doped area, a first buried area, and a second heavily-doped area. The lightly-doped semiconductor structure has a first conductivity type. The first doped well has a second conductivity type and is formed in the lightly-doped semiconductor structure. The first heavily-doped area has the second conductivity type and is formed in the first doped well. The first buried area has the first conductivity type and is formed in the lightly-doped semiconductor structure and under the first doped well, and the first buried area is adjacent to the first doped well. The second heavily-doped area has the second conductivity type and is formed in the lightly-doped semiconductor structure.


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