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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10930576 B1

PDFFull Text
Date of Patent:
Feb. 23, 2021

Filed:

Jun. 26, 2020

Gallium-nitride based devices implementing an engineered substrate structure

Applicant:

Qromis, Inc., Santa Clara, CA (US);

Inventors:

Vladimir Odnoblyudov, Danville, CA (US);

Cem Basceri, Los Gatos, CA (US);

Shari Farrens, Boise, ID (US);

Ozgur Aktas, Pleasanton, CA (US);

Assignee:

QROMIS, INC., Santa Clara, CA (US);

Attorney:

Kilpatrick Townsend & Stockton LLP

Primary Examiner:

Andy Huynh

Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 21/02 (2006.01); H01L 23/66 (2006.01); H01L 29/20 (2006.01); H01L 29/78 (2006.01); H01L 25/16 (2006.01); H01L 33/32 (2010.01); H01L 33/64 (2010.01); H01P 1/30 (2006.01); H01P 3/00 (2006.01); H03H 9/02 (2006.01); B81B 3/00 (2006.01); H03H 9/17 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); B81B 3/0081 (2013.01); H01L 21/0242 (2013.01); H01L 21/0245 (2013.01); H01L 21/0254 (2013.01); H01L 21/02428 (2013.01); H01L 21/02488 (2013.01); H01L 21/02491 (2013.01); H01L 21/02505 (2013.01); H01L 21/02532 (2013.01); H01L 23/66 (2013.01); H01L 25/167 (2013.01); H01L 29/2003 (2013.01); H01L 29/7827 (2013.01); H01L 33/32 (2013.01); H01L 33/647 (2013.01); H01P 1/30 (2013.01); H01P 3/003 (2013.01); H03H 9/02102 (2013.01); B81B 2203/0127 (2013.01); H01L 21/02494 (2013.01); H01L 29/785 (2013.01); H01L 2223/6683 (2013.01); H03H 9/02047 (2013.01); H03H 9/174 (2013.01);
Abstract

A micro-electromechanical system (MEMS) device includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a conductive layer coupled to the first adhesion layer, a second adhesion layer coupled to the conductive layer, and a barrier layer coupled to the second adhesion layer. The support structure defines a cavity. The MEMS device also includes a III-V membrane coupled to a portion of the support structure. A portion of the III-V membrane is suspended over the cavity defined by the support structure and defines a MEMS structure.

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