The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Apr. 25, 2019
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Isamu Nishimura, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/495 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3142 (2013.01); H01L 21/563 (2013.01); H01L 23/367 (2013.01); H01L 23/49541 (2013.01);
Abstract

A semiconductor device includes a semiconductor element, a first substrate, a first electrode, a second electrode and a sealing resin. The first substrate has a first front surface and a first back surface that are spaced apart from each other in a thickness direction. The semiconductor element is mounted on the first main surface. The first electrode includes a first conductive portion and a second conductive portion. The first conductive portion is formed on a portion of the first front surface. The second conductive portion is connected to the first conductive portion and overlaps with the first substrate as viewed in a first direction perpendicular to the thickness direction. The sealing resin covers the semiconductor element. The second electrode is exposed from the sealing resin and electrically connected to the first electrode. The second electrode is in contact with the second conductive portion.


Find Patent Forward Citations

Loading…