The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Feb. 11, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Christine Armstrong, Stamford, NY (US);

Matthew W. Copel, Yorktown Heights, NY (US);

Yu Luo, Hopewell Junction, NY (US);

Paul M. Solomon, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 41/332 (2013.01); H01L 41/39 (2013.01); H01L 41/16 (2006.01); H01L 41/187 (2006.01); H01L 41/316 (2013.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32134 (2013.01); H01L 21/0256 (2013.01); H01L 21/0262 (2013.01); H01L 41/16 (2013.01); H01L 41/187 (2013.01); H01L 41/316 (2013.01); H01L 41/332 (2013.01); H01L 41/39 (2013.01);
Abstract

A subtractive forming method for piezoresistive material stacks includes applying an etch chemistry to an exposed first portion of a piezoresistive material stack. The etch chemistry includes a citric acid component for removing a first element of a piezoelectric layer of the piezoresistive material stack selectively to a surface oxide. At least one second element of the piezoelectric layer remains. The method further includes heating the piezoresistive material stack after said applying the etch chemistry to vaporize the at least one second element. A second portion of the piezoresistive material stack is protected from the removal and the heating by a mask.


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