The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Sep. 23, 2019
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Dae Sung Kim, Icheon-si, KR;

Kyung Bum Kim, Suwon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/349 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 11/5642 (2013.01); G11C 2211/5632 (2013.01); G11C 2211/5641 (2013.01);
Abstract

Provided herein may be a memory system and a method of operating the same. The memory system may include a memory device including memory cells, each having any one of an erased state or one of a plurality of programmed states, and a memory controller configured to estimate an optimal read voltage associated with at least one of the erased state or one of the programmed states based on a threshold voltage distribution corresponding to at least one of the programmed states. The memory controller may include a threshold voltage distribution checker configured to check a first threshold voltage distribution corresponding to a first programmed state, among the programmed states, and determine an average threshold voltage of the first threshold voltage distribution, and an optimal read voltage estimator configured to estimate a second optimal read voltage corresponding to a second side of the first threshold voltage distribution.


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