The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Aug. 14, 2019
Applicant:

Allegro Microsystems, Llc, Manchester, NH (US);

Inventors:

Juan Manuel Cesaretti, Ciudad de Buenos Aires, AR;

Alejandro Gabriel Milesi, Buenos Aires, AR;

Assignee:

Allegro MicroSystems, LLC, Manchester, NH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/22 (2006.01); G06F 11/14 (2006.01); G06F 1/28 (2006.01); G06F 1/30 (2006.01); G11C 5/00 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1469 (2013.01); G06F 1/28 (2013.01); G06F 1/30 (2013.01); G06F 11/1456 (2013.01); G11C 5/005 (2013.01); G11C 5/143 (2013.01); G11C 5/148 (2013.01); G11C 16/225 (2013.01);
Abstract

A data storage circuit for storing data from volatile memory in response to a power loss, the data storage circuit including an input for receiving a power loss signal in response to a power loss from at least one power source, an input configured to receive data from a volatile memory, a single block of non-volatile matrix of memory cells and a driver circuit coupled to said single row of non-volatile matrix of memory cells. The driver circuit is configured to write data to and read data from said single block of non-volatile matrix of memory cells. The single block of non-volatile matrix of memory cells can be provided as a single row electrically erasable programmable read only memory (EEPROM).


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