The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Apr. 24, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Sunghoon Lee, Seoul, KR;
Joonyong Park, Suwon-si, KR;
Dongouk Kim, Pyeongtaek-si, KR;
Jihyun Bae, Seoul, KR;
Bongsu Shin, Seoul, KR;
Dongsik Shim, Hwaseong-si, KR;
Jaeseung Chung, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 5/30 (2006.01); G03F 7/00 (2006.01); B28D 5/02 (2006.01); G02F 1/1335 (2006.01);
U.S. Cl.
CPC ...
G02B 5/3058 (2013.01); B28D 5/022 (2013.01); G03F 7/0002 (2013.01); G03F 7/0007 (2013.01); G02F 1/133528 (2013.01); G02F 2001/133548 (2013.01);
Abstract
A method for manufacturing a pattern structure includes preparing a wafer that has a plurality of fine patterns, generating a first trench by processing the wafer from a first surface to a first depth, and generating a second trench connected to the first trench by processing the wafer from a second surface which is opposite to the first surface to a second depth, thereby cutting the wafer.