Embedded photodetector as device health monitor for hot carrier injection (hci) in power semiconductors

Abstract

A semiconductor device with at least one embedded photodetector is disclosed. The at least one photodetector is embedded in a hot carrier injection (HCI) area, and detects a quantity of emitted photons. Further, the photodetector triggers a warning when the photodetector detects a number of photons greater than a threshold number of photons. Additional embodiments are directed to a method of detecting HCI. The method includes embedding a photodetector in a power semiconductor device, setting at least one threshold number of photons, detecting photons, determining a number of photons, determining when the number of photons is above a threshold number of photons, and generating a warning. When the number of photons is above the threshold, the warning is triggered. Further embodiments are directed to an article of manufacture comprising at least one semiconductor device with at least one photodetector embedded in an area predicted to experience HCI.