The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Sep. 08, 2015
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Koji Nakahara, Inabe, JP;
Kazuhiro Matsuo, Yokkaichi, JP;
Assignee:
Toshiba Memory Corporation, Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/44 (2006.01); B01D 50/00 (2006.01); F23J 15/02 (2006.01); B01D 29/48 (2006.01); B01D 47/10 (2006.01); B01D 29/23 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4412 (2013.01); B01D 50/00 (2013.01); F23J 15/022 (2013.01); B01D 29/23 (2013.01); B01D 29/48 (2013.01); B01D 47/10 (2013.01);
Abstract
A semiconductor manufacturing apparatus in this embodiment includes a reactor, a pump, an exhaust pipe and a mesh member. The reactor houses a semiconductor substrate to treat the semiconductor substrate. The pump exhausts a gas inside the reactor. The exhaust pipe connects between the reactor and the pump. The mesh member is located at a flow inlet of the pump for the gas or in the exhaust pipe and has a main plane having a plurality of meshes arranged thereon. The mesh member has a protrusion and/or protruding shape projecting upstream of the gas.