The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Aug. 27, 2018
Taiyuan University of Technology, Taiyuan, CN;
Mingjiang Zhang, Taiyuan, CN;
Jianzhong Zhang, Taiyuan, CN;
Tianshuang Lv, Taiyuan, CN;
Lijun Qiao, Taiyuan, CN;
Yi Liu, Taiyuan, CN;
Tong Zhao, Taiyuan, CN;
Anbang Wang, Taiyuan, CN;
Yuncai Wang, Taiyuan, CN;
Abstract
A monolithic integrated semiconductor random laser comprising substrate, lower confinement layer on the substrate, active layer on the lower confinement layer, upper confinement layer on the active layer, strip-shaped waveguide layer longitudinally made in middle of the upper confinement layer, Pelectrode layer divided into two segments and made on the waveguide layer and Nelectrode layer on a back face of the lower confinement layer, wherein the two segments correspond respectively to gain region and random feedback region. The random feedback region uses a doped waveguide to randomly feedback light emitted by the gain region and then generates random laser which is random in frequency and intensity. Further, the semiconductor laser is light, small, stable in performance and strong in integration.