The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Aug. 08, 2018
Applicant:

Furukawa Electric Co., Ltd., Tokyo, JP;

Inventors:

Kazuaki Kiyota, Tokyo, JP;

Yasumasa Kawakita, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/12 (2006.01); H01S 5/06 (2006.01); H01S 5/026 (2006.01); H01S 5/0625 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1209 (2013.01); H01S 5/0612 (2013.01); H01S 5/1237 (2013.01); H01S 5/0261 (2013.01); H01S 5/06256 (2013.01); H01S 5/1215 (2013.01); H01S 5/3434 (2013.01); H01S 2301/176 (2013.01);
Abstract

A semiconductor laser device is a vernier-type wavelength-tunable semiconductor laser device including an optical resonator, constituted by first and second reflective elements having reflection comb spectra in which reflection peaks are arranged on a wavelength axis in a substantially periodic manner and having mutually different periods. At least one of the first and second reflective elements has a sampled grating structure having a reflection comb spectrum in which reflection phases at the respective reflection peaks are aligned and the intensity of a reflection peak outside a set laser emission wavelength bandwidth is lower than the intensity of a reflection peak within the laser emission wavelength bandwidth.


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