The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Nov. 17, 2016
Applicant:

Fraunhofer-gesellschaft Zur Förderung Der Angewandten Forschung E.v., Munich, DE;

Inventors:

Martin Moehrle, Berlin, DE;

Victor Dolores Calzadilla, Berlin, DE;

Marlene Zander, Berlin, DE;

Francisco Soares, Berlin, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/0625 (2006.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01); H01S 5/343 (2006.01); H01S 5/12 (2021.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0625 (2013.01); H01S 5/0208 (2013.01); H01S 5/0421 (2013.01); H01S 5/06251 (2013.01); H01S 5/06253 (2013.01); H01S 5/06255 (2013.01); H01S 5/06256 (2013.01); H01S 5/343 (2013.01); H01S 5/06258 (2013.01); H01S 5/1228 (2013.01); H01S 5/2206 (2013.01); H01S 5/2228 (2013.01);
Abstract

It is provided a method for fabricating an electroabsorption modulated laser comprising generating a single mode laser section and an electroabsorption modulator section, comprising fabricating at least one n-doped layer of the laser section and at least one n-doped layer of the modulator section; generating an isolating section for electrically isolating at least the n-doped layer of the laser section and the n-doped layer of the modulator section from one another. Generating the isolating section comprises epitaxially growing at least one isolating layer and structuring the isolating layer before the generation of the n-doped layer of the laser section and the n-doped layer of the modulator section.


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