The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

May. 30, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ilmok Park, Seoul, KR;

Kyusul Park, Suwon-si, KR;

Seulji Song, Suwon-si, KR;

Kwang-Woo Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); G11C 13/0004 (2013.01); H01L 27/24 (2013.01); H01L 45/06 (2013.01); H01L 45/145 (2013.01);
Abstract

A variable resistance memory device includes a word line extending in a first direction, a bit line on the word line and extending in a second direction intersecting the first direction, a switching pattern between the bit line and the word line, a phase change pattern between the switching pattern and the word line, and a bottom electrode between the phase change pattern and the word line, wherein the phase change pattern has a bottom area greater than a top area of the bottom electrode, a thickness of the phase change pattern being greater than a thickness of the bottom electrode, and wherein the bottom and top areas are defined in the first and second directions, and the thicknesses are defined in a third direction intersecting the first and second directions.


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