The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Feb. 03, 2020
Playnitride Inc., Hsinchu County, TW;
Chih-Ling Wu, Hsinchu County, TW;
Yi-Min Su, Hsinchu County, TW;
PlayNitride Inc., Hsinchu County, TW;
Abstract
A micro light emitting device includes an epitaxial structure and a first type electrode. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first type semiconductor layer has a first accommodating cavity. The first type electrode is disposed on the first accommodating cavity. A maximum width of the first type electrode is greater than or equal to a maximum width of an upper surface of the first type semiconductor layer.