The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Aug. 29, 2016
Applicant:
Robert Bosch Gmbh, Stuttgart, DE;
Inventor:
Alfred Goerlach, Kusterdingen, DE;
Assignee:
Robert Bosch GmbH, Stuttgart, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/41766 (2013.01); H01L 29/7803 (2013.01);
Abstract
A power MOSFET having a substrate that has a substrate surface into which a trench structure is introduced, wherein first trenches and second trenches form the trench structure. The first trenches and second trenches are arranged in alternation. The first trenches are filled at least partially with a first material and the second trenches are filled with a second material. The first material has a first conductivity type and the second material has a second conductivity type, the first conductivity type and the second conductivity type being different from each other.