The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10923571 B1

Date of Patent:

Feb. 16, 2021

Filed:

Feb. 20, 2020

Semiconductor device suppressing electric field concentration and method for manufacturing

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Akihiro Hikasa, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C

Primary Examiner:

Robert K Carpenter

Int. Cl.

CPC ...

H01L 29/36 (2006.01); H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 21/32 (2006.01); H01L 21/265 (2006.01); H01L 21/321 (2006.01); H01L 21/324 (2006.01); H01L 29/40 (2006.01);

U.S. Cl.

CPC ...

H01L 29/36 (2013.01); H01L 21/265 (2013.01); H01L 21/32 (2013.01); H01L 21/324 (2013.01); H01L 21/32105 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/66136 (2013.01); H01L 29/66325 (2013.01); H01L 29/66348 (2013.01); H01L 29/7393 (2013.01); H01L 29/7397 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/8611 (2013.01); H01L 29/0638 (2013.01); H01L 29/402 (2013.01);

Abstract

A semiconductor device includes a semiconductor layer, having an active region, in which a functional element is formed, a first impurity region of a first conductivity type, formed at a surface layer portion of the semiconductor layer, a second impurity region of a second conductivity type, formed at a surface layer portion of the first impurity region and defining the active region, and a well region of the second conductivity type, formed along a periphery of the second impurity region at the surface layer portion of the first impurity region and having an inner side edge portion positioned at the second impurity region side, and an outer side edge portion positioned at an opposite side with respect to the second impurity region and having a second conductivity type impurity concentration lower than a second conductivity type impurity concentration of the inner side edge portion.

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