The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Nov. 30, 2018
Hangzhou Silan Microelectronics Co., Ltd., Hangzhou, CN;
Shaohua Zhang, Hangzhou, CN;
HANGZHOU SILAN MICROELECTRONICS CO., LTD., Hangzhou, CN;
Abstract
A power device is disclosed. The power device comprises: a semiconductor substrate; a first doped region on the semiconductor substrate; a plurality of second doped regions located in a first region of the first doped region; a plurality of third doped regions located in a second region of the first doped region. The plurality of second doped regions are separated with each other at a first predetermined spacing. A first charge compensation structure is formed by the plurality of second doped regions and the first doped region, and the first charge compensation structure and the semiconductor substrate are located on a current channel. The plurality of third doped regions are separated with each other at a second predetermined spacing. A second charge compensation structure is formed by the plurality of third doped regions and the first doped region. The second charge compensation structure is configured to disperse continuous surface electric field of the power device. The power device not only has a stable blocking voltage and an improved reliability, but also has a reduced on-resistance.