The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Jul. 24, 2017
Applicant:

Nec Corporation, Tokyo, JP;

Inventors:

Naoki Banno, Tokyo, JP;

Munehiro Tada, Tokyo, JP;

Noriyuki Iguchi, Tokyo, JP;

Assignee:

NEC CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 29/88 (2006.01); H01L 21/8239 (2006.01); H01L 45/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2409 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/8239 (2013.01); H01L 27/2418 (2013.01); H01L 27/2436 (2013.01); H01L 27/2472 (2013.01); H01L 29/88 (2013.01); H01L 45/00 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/14 (2013.01);
Abstract

Provided is a rectifying element that prevents erroneous writing and an erroneous operation and that is substituted for a select transistor; a rewritable semiconductor device that uses a nonvolatile switch including the rectifying element and having excellent reliability, a small area, and low power consumption has a stacked structure of a first electrode, a first buffer layer, a rectifying layer, a second buffer layer, and a second electrode; and the rectifying layercomprises a first silicon nitride layerhaving a high nitrogen content (50 atm % or more) and second silicon nitride layersA andB having a lower nitrogen content than the first silicon nitride layer(50 atm % or less), wherein the second silicon nitride layersA andB are in contact with the first and second buffer layers (), respectively, and the first silicon nitride layeris sandwiched between the second silicon nitride layersA andB.


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