The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Apr. 02, 2019
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Francois Boulard, Grenoble, FR;

Christophe Grangier, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/544 (2006.01); H01L 31/032 (2006.01); H01L 31/18 (2006.01); H01L 31/0296 (2006.01); H01L 27/144 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1465 (2013.01); H01L 23/544 (2013.01); H01L 27/1446 (2013.01); H01L 27/1469 (2013.01); H01L 27/14618 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14696 (2013.01); H01L 31/0296 (2013.01); H01L 31/032 (2013.01); H01L 31/1864 (2013.01); H01L 2223/54426 (2013.01);
Abstract

The invention relates to a method for manufacturing a first support () for forming, in particular with a functionalised second support (), an optoelectronic component (), the first support () comprising a semiconductor layer () and an alignment mark () provided on said semiconductor layer (). The manufacturing method includes in particular a step of forming an aperture () in a semiconductor layer () comprising cadmium, a step of diffusing cadmium in a second location () of the aperture () and a cadmium sensitive etching step for promoting etching of one from the second location () which is rich in cadmium and the rest of a surface (B) of the semiconductor layer (). The invention also relates to a first support ().


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