The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Nov. 20, 2018
Shanghai Huali Integrated Circuit Mfg. Co., Ltd., Shanghai, CN;
Yan Li, Shanghai, CN;
Wuzhi Zhang, Shanghai, CN;
Other;
Abstract
The present invention provides a pixel structure for a CMOS image sensor and a manufacturing method therefor, the pixel structure comprising: a substrate; a floating diffusion region formed in the substrate; an interlayer dielectric layer formed on an upper surface of the substrate and covering the pixel structure; and a light-shielding wall formed in the interlayer dielectric layer, wherein a projection of the light-shielding wall in the height direction of the substrate surrounds a projection of the floating diffusion region in the height direction of the substrate. The present invention further provides a manufacturing method for manufacturing the pixel structure. The pixel structure manufactured by means of the manufacturing method provided in the present invention can shield the irradiation of incident light on the floating diffusion region of the global CMOS image sensor, thereby reducing interference signals.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile