The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Apr. 18, 2018
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/40 (2006.01); H01L 21/3215 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1259 (2013.01); H01L 21/32155 (2013.01); H01L 27/092 (2013.01); H01L 27/1288 (2013.01); H01L 29/0615 (2013.01); H01L 29/401 (2013.01); H01L 29/4238 (2013.01);
Abstract
The embodiments of the present disclosure provide an array substrate, a preparation method thereof, and a display device. The preparation method of an array substrate comprises: forming the active layer, a gate insulating layer, the gate metal layer and the patterned photoresist sequentially on a substrate; forming a gate electrode transition pattern by etching a gate metal layer via a patterned photoresist, using a wet etching process and a dry etching process sequentially; and doping an area of the active layer not sheltered by the gate electrode transition pattern with ions to form a heavily doped area of the active layer.