The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Apr. 25, 2019
Sandisk Technologies Llc, Addison, TX (US);
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A source-level sacrificial layer and an alternating stack of insulating layers and sacrificial material layers are formed over a substrate. Memory openings are formed through the alternating stack, and a source cavity is formed by removing the source-level sacrificial layer. A memory film is formally formed by a conformal deposition process, and a source contact layer is formed in the source cavity. Vertical semiconductor channels and drain regions are formed in remaining volumes of the memory openings on sidewalls of the source contact layer. A backside contact via structure is formed through the alternating stack and directly on a sidewall of the source contact layer.