The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Jul. 24, 2018
Applicant:

Amazing Microelectronic Corp., New Taipei, TW;

Inventors:

Kun-Hsien Lin, Hsinchu, TW;

Chih-Wei Chen, Taoyuan, TW;

Mei-Lian Fan, Hukou Township, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 27/0262 (2013.01); H01L 29/861 (2013.01);
Abstract

A vertical transient voltage suppression device includes a semiconductor substrate having a first conductivity type, a first doped well having a second conductivity type, a first heavily-doped area having the first conductivity type, a second heavily-doped area having the first conductivity type, and a diode. The first doped well is arranged in the semiconductor substrate and spaced from the bottom of the semiconductor substrate, and the first doped well is floating. The first heavily-doped area is arranged in the first doped well. The second heavily-doped area is arranged in the semiconductor substrate. The diode is arranged in the semiconductor substrate and electrically connected to the second heavily-doped area through a conductive trace.


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