The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Dec. 04, 2018
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Po-Chun Lin, Changhua, TW;

Chin-Lung Chu, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 21/324 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 21/30625 (2013.01); H01L 21/324 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/53228 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 2224/039 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/0361 (2013.01); H01L 2224/0384 (2013.01); H01L 2224/03612 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05578 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05687 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/80035 (2013.01); H01L 2224/80357 (2013.01); H01L 2224/80801 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80935 (2013.01); H01L 2224/80986 (2013.01);
Abstract

The present disclosure is directed to a method for preparing a semiconductor apparatus having a plurality of bonded semiconductor devices formed by a fusion bonding technique and a method for preparing the same. The method includes the steps of forming a first semiconductor device having a first conductive portion, a first dielectric portion adjacent to the first conductive portion, and a depression at an upper surface of the first conductive portion; forming a second semiconductor device having a second conductive portion and a second dielectric portion adjacent to the second conductive portion; disposing the first semiconductor device and the second semiconductor device in a manner such that the first conductive portion faces the second conductive portion; and expanding at least one of the first conductive portion and the second conductive portion to fill the depression.


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