The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10923404 B1

Date of Patent:

Feb. 16, 2021

Filed:

Jan. 14, 2020

Inspection method, inspection device, and marking forming method

Applicant:

Hamamatsu Photonics K.k., Hamamatsu, JP;

Inventors:

Shinsuke Suzuki, Hamamatsu, JP;

Akira Shimase, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;

Attorney:

Faegre Drinker Biddle & Reath LLP

Primary Examiner:

J E Schoenholtz

Int. Cl.

CPC ...

H01L 21/66 (2006.01); G01R 31/28 (2006.01); H01L 21/268 (2006.01); H01L 21/67 (2006.01); H01L 23/544 (2006.01);

U.S. Cl.

CPC ...

H01L 22/12 (2013.01); G01R 31/2836 (2013.01); H01L 21/268 (2013.01); H01L 21/67115 (2013.01); H01L 21/67259 (2013.01); H01L 23/544 (2013.01);

Abstract

An inspection method according to an embodiment is an inspection method of performing laser marking on a semiconductor device (D) including a substrate (SiE) and a metal layer (ME) formed on the substrate (SiE), and the inspection method includes specifying a fault point (fp) in the semiconductor device (D) by inspecting the semiconductor device (D), and irradiating the semiconductor device (D) with laser light having a wavelength that is transmitted through the substrate (SiE) from the substrate (SiE) side so that a marking is formed at least at a boundary between the substrate (SiE) and the metal layer (ME) on the basis of the fault point (fp).

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