The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Jul. 15, 2019
Applicant:
Denso Corporation, Kariya, JP;
Inventors:
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/02104 (2013.01); H01L 21/28 (2013.01); H01L 29/0619 (2013.01); H01L 29/0696 (2013.01); H01L 29/1608 (2013.01); H01L 29/417 (2013.01); H01L 29/4236 (2013.01); H01L 29/78 (2013.01);
Abstract
In a semiconductor device, a semiconductor element is formed in a semiconductor, an interlayer insulating film having a contact hole and containing at least one of phosphorus and boron is disposed above the semiconductor, a metal electrode is disposed above the interlayer insulating film and is connected to the semiconductor element through the contact hole, and the interlayer insulating film is filled with hydrogen.