The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Oct. 26, 2017
Applicants:
Shin-etsu Polymer Co., Ltd., Tokyo, JP;
National University Corporation Saitama University, Saitama, JP;
Inventors:
Assignee:
NATIONAL UNIVERSITY CORPORATION SAITAMA UNIVERSITY, Saitama, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 21/02 (2006.01); H01L 21/302 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0445 (2013.01); H01L 21/02675 (2013.01); H01L 21/302 (2013.01); H01L 21/67248 (2013.01);
Abstract
An etching method in which: molten sodium hydroxide in a prescribed temperature range is used as a molten alkali, whereby an Si surface of an etching surface of an SiC substrate, in which the substrate surface is configured from the Si surface and a C surface, is removed at a higher speed than is the C surface while an oxide film is formed on the etching surface in a high-temperature environment containing oxygen.
Quick Actions:
Ikeno, Junichi. (2021). Etching method (U.S. Patent No. 10923354). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10923354
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile