The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Mar. 16, 2017
Applicant:
Iqe Plc, Cardiff, GB;
Inventors:
Rytis Dargis, Oak Ridge, NC (US);
Andrew Clark, Mountain View, CA (US);
Rodney Pelzel, Emmaus, PA (US);
Assignee:
IQE plc, Cardiff, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02505 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 29/511 (2013.01); H01L 29/517 (2013.01); H01L 29/20 (2013.01); H01L 2924/01106 (2013.01);
Abstract
Systems and methods are described herein for growing epitaxial metal oxide as buffer for epitaxial III-V layers. A layer structure includes a base layer and a first rare earth oxide layer epitaxially grown over the base layer. The first rare earth oxide layer includes a first rare earth element and oxygen, and has a bixbyite crystal structure. The layer structure also includes a metal oxide layer epitaxially grown directly over the first rare earth oxide layer. The metal oxide layer includes a first cation element selected from Group III and oxygen, and has a bixbyite crystal structure.