The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Feb. 25, 2019
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01F 1/055 (2006.01); C22C 38/00 (2006.01); C22C 38/02 (2006.01); C22C 38/04 (2006.01); C22C 38/06 (2006.01); C22C 38/08 (2006.01); C22C 38/10 (2006.01); C22C 38/14 (2006.01); C22C 38/16 (2006.01); H02K 7/00 (2006.01); H02K 7/18 (2006.01); H01F 1/059 (2006.01);
U.S. Cl.
CPC ...
H01F 1/055 (2013.01); C22C 38/002 (2013.01); C22C 38/005 (2013.01); C22C 38/02 (2013.01); C22C 38/04 (2013.01); C22C 38/06 (2013.01); C22C 38/08 (2013.01); C22C 38/10 (2013.01); C22C 38/14 (2013.01); C22C 38/16 (2013.01); H01F 1/0557 (2013.01); H02K 7/003 (2013.01); H02K 7/1823 (2013.01); C22C 2202/02 (2013.01); H01F 1/0593 (2013.01);
Abstract
A magnetic material is expressed by a composition formula: (RZ)MT, and includes a main phase having a ThMncrystal structure. In the ThMncrystal structure, when an amount of the element Z occupying 2a site is Zatomic percent, an amount of the element Z occupying 8i site is Zatomic percent, an amount of the element Z occupying 8j site is Zatomic percent, and an amount of the element Z occupying 8f site is Zatomic percent, Z, Z, Z, and Zsatisfy (Z+Z+Z)/(Z+Z+Z+Z)<0.1.