The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Feb. 11, 2019
Applicant:
Attopsemi Technology Co., Ltd, Hsinchu, TW;
Inventor:
Shine C. Chung, San Jose, CA (US);
Assignee:
Attopsemi Technology Co., LTD, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); G11C 29/02 (2006.01); G11C 17/18 (2006.01); G11C 29/50 (2006.01); G11C 29/06 (2006.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); G11C 17/18 (2013.01); G11C 29/027 (2013.01); G11C 29/06 (2013.01); G11C 29/50 (2013.01);
Abstract
A method of testing an OTP memory is disclosed. An OTP program mechanism that uses heat accelerated electromigration can be fully tested. In one embodiment, an OTP cell's programmability can be tested if an initial OTP element resistance is less than a predetermined resistance, as such insures that sufficient heat can be generated to be programmable. A non-destructive program state, or fake reading 1, can be created by low-voltage programming a cell while reading the same cell at the same time. Accordingly, alternative 0s and 1s patterns can be generated to fully test every functional block of an OTP memory.