The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Apr. 10, 2018
Applicant:

Sharp Kabushiki Kaisha, Sakai, JP;

Inventors:

Yohei Takeuchi, Sakai, JP;

Takuya Watanabe, Sakai, JP;

Yasuaki Iwase, Sakai, JP;

Akira Tagawa, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/36 (2006.01); G11C 19/18 (2006.01); G11C 19/28 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3677 (2013.01); G11C 19/186 (2013.01); G11C 19/28 (2013.01); G09G 2310/0286 (2013.01);
Abstract

A gate driver (scanning signal line drive circuit) that can allow a gate output to promptly fall without causing a deterioration in a transistor is implemented. A gate-output fall transistor (T) and a gate-output stabilization transistor (T) are provided near an output portion of the unit circuit that constitutes a shift register. A first gate low voltage (Vgl) having a voltage level that is conventionally used to bring pixel TFTs into an off state is provided to a source terminal of the gate-output stabilization transistor (T), and a second gate low voltage (Vgl) having a lower voltage level than the first gate low voltage (Vgl) is provided to a source terminal of the gate-output fall transistor (T). Upon allowing the gate output to fall, the gate-output fall transistor (T) is brought into an on state and then the gate-output stabilization transistor (T) is brought into an on state.


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