The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Oct. 25, 2017
Samsung Electronics Co., Ltd, Suwon-si, KR;
Artem Rudolfovitch Vilenskiy, Moscow, RU;
Elena Aleksandrovna Shepeleva, Kostroma, RU;
Gennadiy Aleksandrovich Evtyushkin, Moscow, RU;
Mikhail Nikolaevich Makurin, Arkhangelsk, RU;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A high-frequency device and/or a high-frequency switch including the same may include: a signal electrode; a first ground electrode arranged in parallel with the signal electrode; a first liquid crystal layer disposed between the signal electrode and the first ground electrode; and a first dielectric layer disposed between the first liquid crystal layer and the first ground electrode, and/or between the signal electrode and the first liquid crystal layer. The first dielectric layer may have a dielectric constant that is larger than the dielectric constant of the first liquid crystal layer. The high-frequency device and/or the high-frequency device including the same may be variously implemented.