The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Jun. 26, 2017
Applicant:
Siemens Aktiengesellschaft, Munich, DE;
Inventor:
Karl Fleisch, Erlangen, DE;
Assignee:
SIEMENS AKTIENGESELLSCHAFT, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/567 (2006.01); H03K 17/13 (2006.01); H02M 1/088 (2006.01); H03K 17/16 (2006.01); H03K 17/12 (2006.01); H02M 1/32 (2007.01);
U.S. Cl.
CPC ...
H03K 17/567 (2013.01); H02M 1/088 (2013.01); H02M 1/32 (2013.01); H03K 17/127 (2013.01); H03K 17/13 (2013.01); H03K 17/164 (2013.01); H03K 17/168 (2013.01); H03K 2217/0009 (2013.01);
Abstract
In a method for actuating reverse-conducting semiconductor switches, a plurality of reverse-conducting semiconductor switches is arranged in a parallel circuit. Gate contacts of switching elements of at least two of the plurality of reverse-conducting semiconductor switches are controlled by actuating the at least two of the reverse-conducting semiconductor switches at least intermittently with different voltages, thereby allowing to influence a behavior of the switching elements of the at least two of the reverse-conducting semiconductor switches in IGBT (Insulated-Gate-Bipolar-Transistor) and a behavior in diode mode.