The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Nov. 16, 2018
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Kohei Kawano, Tokyo, JP;
Tsuyoshi Ota, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02J 7/00 (2006.01); H02M 3/07 (2006.01);
U.S. Cl.
CPC ...
H02J 7/008 (2013.01); H02J 7/00712 (2020.01); H02J 7/00714 (2020.01); H02J 7/007182 (2020.01); H02M 3/07 (2013.01);
Abstract
A semiconductor device capable of turning a discharge control transistor off faster while maintaining safety is provided. A control unit, in discharge stopping processing, turns a switching element on and executes a first discharge-stopping mode in which the gate voltage of the discharge control transistor is withdrawn via a load and, at a predetermined discharge-stopping mode switching timing, switches to a second discharge-stopping mode in which the gate voltage of the discharge control transistor is withdrawn directly to a low-voltage power source.