The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Dec. 21, 2018
National Sun Yat-sen University, Kaohsiung, TW;
Yung-Jr Hung, Kaohsiung, TW;
Yen-Chieh Wang, Kaohsiung, TW;
Ping-Feng Hsieh, Kaohsiung, TW;
Wei Lin, Kaohsiung, TW;
NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung, TW;
Abstract
A distributed feedback (DFB) semiconductor laser device includes an active layer, a first grating layer and a second grating. The first grating layer has a first grating structure with a first grating period. The second grating layer has a second grating structure with a second grating period substantially different from the first grating period. The active layer, the first grating layer and the second grating layer are vertically stacked, and the equivalent grating period of the DFB semiconductor laser device is (2×P×P)/(P+P), where Pand Prespectively represent the first grating period and the second grating period.