The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2021

Filed:

Jun. 12, 2020
Applicant:

Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Anhe He, Xiamen, CN;

Suhui Lin, Xiamen, CN;

Jiansen Zheng, Xiamen, CN;

Kangwei Peng, Xiamen, CN;

Xiaoxiong Lin, Xiamen, CN;

Chenke Hsu, Xiamen, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/00 (2006.01); H01L 33/62 (2010.01); H01L 23/00 (2006.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 33/40 (2013.01); H01L 24/06 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/06102 (2013.01); H01L 2224/13006 (2013.01); H01L 2224/13011 (2013.01); H01L 2224/13016 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13018 (2013.01); H01L 2224/13019 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/14051 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/48506 (2013.01); H01L 2224/80805 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81805 (2013.01); H01L 2225/06513 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/37001 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer, a second semiconductor layer; a first metal layer arranged on at least a portion of the first semiconductor layer and in contact with the first semiconductor layer; and an electrode layer arranged over the light emitting structure, and having a first electrode layer and a second electrode layer. The first electrode layer is electrically coupled to the first and second semiconductor layers; the second electrode layer is configured for bonding with a package substrate, and includes a first and second bonding regions; the first bonding region is electrically coupled to the first semiconductor layer; the second bonding region is electrically coupled to the second semiconductor layer; and the first metal layer is not overlapped with the first bonding region of the second bonding region in a vertical direction.


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