The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2021

Filed:

Oct. 21, 2019
Applicant:

Playnitride Inc., Hsinchu County, TW;

Inventors:

Yun-Li Li, Hsinchu County, TW;

Yu-Chu Li, Hsinchu County, TW;

Pei-Hsin Chen, Hsinchu County, TW;

Assignee:

PlayNitride Inc., Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 25/075 (2006.01); H01L 25/16 (2006.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 25/0753 (2013.01); H01L 25/167 (2013.01);
Abstract

A micro light-emitting device includes an epitaxial structure, a first type pad, a current commanding structure and an insulating layer. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer. The first type pad is disposed on the epitaxial structure and electrically connected to the first type semiconductor layer. The current commanding structure is disposed on the epitaxial structure and electrically connected to the second type semiconductor layer. An orthogonal projection area of the current commanding structure on the second type semiconductor layer is smaller than a surface area of a surface of the second type semiconductor layer. The insulating layer contacts a portion of the current commanding structure and a portion of the surface of the second type semiconductor layer. The insulating layer has an opening exposing at least a portion of the portion of the current commanding structure.


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